PART |
Description |
Maker |
SUP65P06-20 SUB65P06-20 |
From old datasheet system P-Channel Enhancement-Mode Trans P-Channel 60-V (D-S), 175C MOSFET TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,65A I(D),TO-220AB P-Channel MOSFET 30V N-Channel PowerTrench MOSFET
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VISAY[Vishay Siliconix] Vishay Intertechnology Inc Vishay Intertechnology,Inc.
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2SK1547 2SK947 2SK903 |
MOSFET Transistor TRANSISTOR,MOSFET,N-CHANNEL,250V V(BR)DSS,12A I(D),TO-220AB TRANSISTOR,MOSFET,N-CHANNEL,800V V(BR)DSS,4A I(D),TO-220
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Fuji Electric Fuji Semiconductors, Inc.
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STD2NB80 6424 STD2NB80T4 |
From old datasheet system N-CHANNEL MOSFET N - CHANNEL 800V - 4.6 ohm - 1.9A - IPAK/DPAK PowerMESH MOSFET TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 1.9A I(D) | TO-252AA 晶体管| MOSFET的| N沟道| 800V的五(巴西)直| 1.9AI(四)|52AA
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SGS Thomson Microelectronics ST Microelectronics 意法半导 STMicroelectronics N.V.
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STB10NA40 STB10NA40-1 STB10NA40T4 |
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 10A I(D) | TO-263AB TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 10A I(D) | TO-262VAR N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
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STMICROELECTRONICS[STMicroelectronics]
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STB3NC60 STB3NC60T4 STB3NC60-1 |
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 3A I(D) | TO-262AA TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 3A I(D) | TO-263AB N - CHANNEL 600V - 3.3Ohm -3A-D 2 PAK/I 2 PAK PowerMESH II MOSFET N - CHANNEL 600V - 3.3ohm- 3A - D2PAK/I2PAK PowerMESHII MOSFET
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SGS Thomson Microelectronics STMicroelectronics 意法半导
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BUZ40B BSP372 BSP373 BSS129 BSS101 SN7000 BSS135 |
8 A, 500 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 TO-220, 3 PIN SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level Avalanche rated 1.7 A, 100 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET SIPMOS Small-Signal Transistor (N channel Enhancement mode Avalanche rated) 150 mA, 240 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 130 mA, 240 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 250 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 80 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
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Infineon Technologies AG SIEMENS AG SIEMENS A G
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IRLC130 IRFC214R IRFC9014R IRFC254R IRFC054R IRFC2 |
TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | CHIP TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | CHIP TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | CHIP TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | CHIP 晶体管| MOSFET的| N沟道| 100V的五(巴西)决策支持系统|芯片 TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | CHIP 晶体管| MOSFET的| N沟道| 200伏五(巴西)决策支持系统|芯片 TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | CHIP 晶体管| MOSFET的| N沟道| 400V五(巴西)决策支持系统|芯片 TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | CHIP 晶体管| MOSFET的| P通道| 100V的五(巴西)决策支持系统|芯片 TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | CHIP 晶体管| MOSFET的| P通道| 200伏五(巴西)决策支持系统|芯片
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ITT, Corp. Amphenol, Corp. ZETTLER electronics GmbH Electronic Theatre Controls, Inc.
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ND24106L BSS129 ND2406L ND2410L 70198 |
N-Channel Depletion-Mode MOSFET Transistor(??ぇ婕??瀵奸??甸?0惟锛?す???娴?.15A??娌????敖??OSFET?朵?绠? N-Channel Depletion-Mode MOSFET Transistor(最大漏源导通电0Ω,夹断电.15A的N沟道耗尽型MOSFET晶体 N沟道耗尽型MOSFET晶体管(最大漏源导通电0Ω,夹断电.15A的N沟道耗尽型MOSFET的晶体管 From old datasheet system N-Channel Depletion-Mode MOSFET Transistors
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Vishay Intertechnology,Inc. Vishay Intertechnology, Inc.
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BUZ104SL-4 |
Quad-Channel SIPMOS Power Transistor SIPMOS ? Power Transistor SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated) 3.2 A, 55 V, 0.125 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET 3.2 A, 55 V, 0.125 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET PLASTIC, DSO-28
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SIEMENS[Siemens Semiconductor Group] SIEMENS AG Infineon Technologies AG
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NSFY30509 NSFY30942 |
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 7A I(D) | TO-257 TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 3A I(D) | TO-257 晶体管| MOSFET的| N沟道| 900V五(巴西)直| 3A条(丁)|57
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Harwin PLC
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